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Kleopatra E. Aretouli received her B.Sc. degree in Physics in 2007, from the University of Crete, Greece and her M.Sc. in “Optoelectronics – Microelectronics” from the same department. During her master she has worked in MNEO Group/IESL/FORTH on the study and electrical characterization of high power AlN/GaN HEMT devices. From 2010 to 2012 she had been working on growing III-Nitride structures with the Molecular Beam Epitaxy (MBE) method at FORTH. Since 2013 she is a Phd candidate in solid state Physics at University of Athens, working at the Institute of Materials Science of the National Center for Scientific Research Demokritos on MBE Growth and structural and electrical characterization of newly discovered materials (topological insulators and transition metal dichalcogenides). She has 5 publications and 1 Patent at the international patent system (WIPO/ PCT).