Over the last few decades, the broad and multi-faceted area of Microelectronics has benefited from and fueled remarkable advances in materials research, technology development and manufacturing techniques. These advances have not only resulted in the miniaturization of electronic components, circuits, and systems but also motivated considerable multidisciplinary research activities to understand, engineer and control the properties of materials, structures and devices at the nanoscale. This has enabled a wide range of new applications in Information and Communication Technologies as well as in new sectors of relevance like Energy, Environment, Agriculture, Healthcare and Pharmaceuticals.

Since 1995, our group has contributed to these R&D activities with particular focus on low-dimensional materials and devices for information storage and processing. Along the years, we have gained from our experience in facing difficult scientific and technological challenges, while keeping in mind the following objectives:

  • Development of dielectrics and nanostructures for inorganic and organic electronics
  • Integration of new materials into micro- & nanoelectronics technologies
  • Design, fabrication and testing of electronic devices with emphasis on non-volatile memory cells
  • Technology transfer to industry

Some of our past activities have included the development of the low-energy ion-beam-synthesis (LE-IBS) as a manufacturable technique for generating 2D arrays of Si nanocrystals in thin gate dielectrics. Demonstrated in 1996 in collaboration with Salford University (UK), this technique was further exploited in the fabrication of nanocrystal memories (NCMs). These activities were first supported by the EU project, FASEM (1997-2000). LE-IBS development with target the realization of non-volatile NCMs in an industrial environment was then implemented within the framework of the EU project, NEON (2001-2004), in collaboration with the US implanter manufacturer, Axcelis.

In addition to our LE-IBS-NCM activities, major efforts have focused on the development of materials with functionalities which enable the realization of advanced logic and memory devices. Novel materials, nanostructures and device concepts have been demonstrated (e.g., nanoparticle-rich organic dielectrics and GaN/Ge quantum dots for NCMs, organic proton memories, high-k dielectrics stacks for charge trapping memories) together with the introduction of new techniques and processes. These activities (see INN and former IMEL Annual Reports) were conducted in the frame of several European and National projects in collaboration with other INN research groups and a number of Institutions and Companies. A significant part of our current research effort focuses on specific “nanoelectronics” topics including the development of:

  • High-k dielectrics by ALD for SONOS-type memory
  • Electron-beam-lithography and block-copolymer assisted dielectric nanopatterning. Application to the selective growth of III-V nanowires
  • Nanoscaled cross-bar redox resistive RAMs (ReRAMs) with graphene modified electrodes
  • Junctionless Si-nanowire memory devices
  • Solid-state electrolyte systems for electronics and sensing


Supporting Infrastructures


Funded Projects

  • Greek-German (INN-FZ Julich) G-ReRAM bilateral project, Graphene controlled electrochemical interfaces for nanoscaled ReRAM devices, GSRT (2013-2015)
  • THALES NanoWire project, Spontaneous growth, properties and devices of III-V semiconductor nanowires, University of Crete, Ministry of Education (2012-2015)
  • Archimedes III OEDDIR project, Organic electronic devices for radiation sensing, Technical University of Crete, Ministry of Education (2012-2015)
  • Herakleitos project, Charge trapping devices based on novel high-k dielectrics University of Patras, Ministry of Education (2011-2014)