GRAPHENE AND TWO DIMENSIONAL MATERIALS FOR NANOELECTRONICS – Publications

Books

Book, Springer (2007)

Springer Series in Advanced Microelectronics

Advanced Gate Stacks for High-Mobility Semiconductors

Editors: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M.


 

Book, CRC Press (2016)

2D Materials for Nanoelectronics

Editors: M. Houssa M., Dimoulas A., Molle A.

 

 


 

 Selected Publications

 

  1. Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Appl. Phys. Lett.  114, 112901 (2019)

C. Zacharaki, P. Tsipas, S. Chaitoglou, S. Fragkos, M. Axiotis, A. Lagoyiannis, R. Negrea, L.C. Pintilie and A. Dimoulas

  1. Room Temperature Commensurate Charge Density Wave in Epitaxial Strained TiTe2 Multilayer Films

Adv. Mater. Interf. 6, 1801850 (2019)

S. Fragkos, R. Sant, C. Alvarez, A. Bosak, P. Tsipas, D. Tsoutsou, H. Okuno, G. Renaud and A. Dimoulas

  1. Mo2C/graphene heterostructures: Low temperature chemical vapor deposition on liquid bimetallic Sn-Cu and hydrogen evolution reaction electrocatalytic properties

Nanotechnology 30, 125401 (2019)

S. Chaitoglou, T. Giannakopoulou, T. Speliotis, A. Vavouliotis, C. Trapalis and Athanasios Dimoulas

  1. Direct Observation at Room Temperature of the Orthorhombic Weyl Semimetal Phase in Thin Epitaxial MoTe2

Adv. Function. Mater. 28, 1802084 (2018)

P.Tsipas, S. Fragkos, D. Tsoutsou, C. Alvarez, R. Sant, G. Renaud, H. Okuno and A. Dimoulas

  1. Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy

ACS Nano 12, 1696 (2018)

P. Tsipas, D. Tsoutsou, S. Fragkos, R. Sant, C. Alvarez, H. Okuno, G. Renaud, R. Alcotte, T. Baron and A. Dimoulas

  1. Molecular beam epitaxy of thin HfTe2 semimetal films

2D Materials 4, 015001 (2016)

S. A. Giamini, J. Marquez-Velasco, P. Tsipas, D. Tsoutsou, G. Renaud and A. Dimoulas

  1. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(111) and electronic structure characterization

Appl. Surf. Sci. 369, 251 (2016)

A. Kordatos, N. Kelaidis, S. A. Giamini, J. Marquez-Velasco, E. Xenogiannopoulou, P. Tsipas, G. Kordas and A. Dimoulas

  1. Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

ACS Appl. Mater. Interfaces 8, 23222 (2016)

K. E. Aretouli, D. Tsoutsou, P. Tsipas, J. Marquez-Velasco, S. A. Giamini, N. Kelaidis, V. Psycharis and A. Dimoulas

  1. Graphene by one-step chemical vapor deposition from ferrocene vapors: Properties and electrochemical evaluation

J. Appl. Phys. 119, 064303 8 (2016)

G. Pilatos, A. V. Perdikaki, A. Sapalidis, G. S. Pappas, T. Giannakopoulou, D. Tsoutsou, E. Xenogiannopoulou, N. Boukos, A. Dimoulas, C. Trapalis, N. K. Kanellopoulos and G. N. Karanikolos

  1. Negative Quantum Capacitance Effects in Metal-Insulator-Semiconductor Devices with Composite Graphene-Encapsulated Gates

Adv. Electron. Mater. 2, 1500297 (2016)

P. Tsipas, S. A. Giamini, J. Marquez-Velasco, N. Kelaidis, D. Tsoutsou, K. E. Aretouli, E. Xenogiannopoulou, E. K. Evangelou and A. Dimoulas

  1. Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(111)

J. Phys. Condens. Matt. 28, 045002 (2016)

F. D’Acapito, S. Torrengo, E Xenogiannopoulou, P Tsipas, J Marquez Velasco, D Tsoutsou and A. Dimoulas

  1. Epitaxial 2D MoSe2 (HfSe2) semiconductor/2D TaSe2 metal van der Waals Heterostructures

ACS Appl. Mater. Interfaces 8, 1836 (2016)

D. Tsoutsou, K. E Aretouli , P. Tsipas, J. Marquez-Velasco, E. Xenogiannopoulou, N. Kelaidis. S. A Giamini and A. Dimoulas

  1. Silicene: A review of recent experimental and theoretical investigations – Topical Review Article

J. Phys: Condens. Matter 27, 253002 (2015)

M. Houssa, A. Dimoulas and A. Molle

  1. High quality large area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale 7, 7896 (2015)

E. Xenogiannopoulou, P. Tsipas, K. E. Aretouli, D. Tsoutsou, S. A. Giamini, C. Bazioti, G.P. Dimitrakopulos, Ph. Komninou, S. Brems, C. Huyghebaert, I. P. Radu and A. Dimoulas

  1. Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

Appl. Phys. Lett. 106, 143105 (2015)

K. E. Aretouli, P. Tsipas, D. Tsoutsou, J. Marquez-Velasco, E. Xenogiannopoulou, S. A. Giamini, E. Vassalou, N. Kelaidis and A. Dimoulas

  1. Silicene and germanene: Silicon and germanium in the “flatland”Review Article

Microelectron. Eng. 131, 68 (2015)

A. Dimoulas

  1. Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric

ACS Nano 8, 6614 (2014)

P. Tsipas, E. Xenogiannopoulou, S. Kassavetis, D. Tsoutsou, E. Golias, C. Bazioti, G. P. Dimitrakopulos, P. Komninou, H. Liang, M. Caymax, and A. Dimoulas

  1. Electronic band structure imaging of three layer twisted graphene on single crystal Cu(111)

Appl. Phys. Lett. 103 213108 (2013)

J. Marquez Velasco, N. Kelaidis, E. Xenogiannopoulou, Y. S. Raptis, D. Tsoutsou, P. Tsipas, Th. Speliotis, G. Pilatos, V. Likodimos, P. Falaras and A. Dimoulas

  1. Surface electronic bands of submonolayer Ge on Ag(111)

Phys. Rev. B 88, 075403 (2013)

E. Golias, E. Xenogiannopoulou, D. Tsoutsou, P. Tsipas, S. A. Giamini and A. Dimoulas

  1. Evidence for hybrid surface metallic band in (4 × 4) silicene on Ag(111)

Appl. Phys. Lett. 103, 231604 (2013)

D. Tsoutsou, E. Xenogiannopoulou, E. Golias, P. Tsipas and A. Dimoulas

  1. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Appl. Phys. Lett. 103, 251605 (2013)

P. Tsipas, S. Kassavetis, D. Tsoutsou, E. Xenogiannopoulou, E. Golias, S.A. Giamini, C. Grazianetti, D. Chiappe, A. Molle, M. Fanciulli and A. Dimoulas

  1. Structural evolution of single-layer films during deposition of silicon on silver: A first-principles study

J. Phys. Condens. Matter 24, 442001 (2012)

D. Kaltsas, L. Tsetseris and A. Dimoulas

  1. The role of La surface chemistry in the passivation of Ge

Appl. Phys. Lett. 96, 012902 (2010)

A. Dimoulas, D. Tsoutsou, Y. Panayiotatos, A. Sotiropoulos, G. Mavrou, S. F. Galata and E. Golias

  1. Modeling of negatively charged states at the Ge surface and interfaces

Appl. Phys. Lett. 94, 012114 (2009)

P. Tsipas and A. Dimoulas

  1. Source and Drain Contacts for Germanium and III-V FETs for Digital Logic Review Article

MRS Bulletin 34, 522 (2009)

A. Dimoulas, A. Toriumi and S. E. Mohney

  1. Very high- κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

Appl. Phys. Lett. 93, 212904 (2008)

G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori and J. Fompeyrine

  1. Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks

Appl. Phys. Lett. 93, 082904 (2008)

P. Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori and J. Fompeyrine

  1. Electrical properties of La2O3 and HfO2 La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

J. Appl. Phys. 103, 014506 (2008)

G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E. K. Evangelou, J. W. Seo and Ch. Dieker

  1. Interface engineering for Ge metal-oxide-semiconductor devices

Thin Solid Films 515, 6337 (2007)

A. Dimoulas, D.P. Brunco, S. Ferrari, J.W. Seo, Y. Panayiotatos, A. Sotiropoulos, T. Conard, M. Caymax, S. Spiga, M. Fanciulli, Ch. Dieker, E.K. Evangelou, S. Galata, M. Houssa and M. M. Heyns

  1. Fermi-level pinning and charge neutrality level in germanium

Appl. Phys. Lett. 89, 252110 (2006)

A. Dimoulas, P. Tsipas, A. Sotiropoulos and E. K. Evangelou

  1. Intrinsic carrier effects in HfO2 -Ge metal-insulator- semiconductor capacitors

Appl. Phys. Lett. 86, 223507 (2005)

A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou and A. Sotiropoulos

  1. HfO2 high- κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

Appl. Phys. Lett. 86, 032908 (2005)

A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa and M. Caymax

  1. La2Hf2O7 high-k gate dielectric grown directly on Si(001) by molecular-beam epitaxy

Appl. Phys. Lett.  85, 3205 (2004)

A. Dimoulas, G. Vellianitis, G. Mavrou, G. Apostolopoulos, A. Travlos, C. Wiemer, M. Fanciulli and Z. M. Rittersma

  1. Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters

J. Appl. Phys. 92, 426 (2002)

A. Dimoulas, G. Vellianitis, A. Travlos, V. Ioannou-Sougleridis and A. G. Nassiopoulou

  1. Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications

J. Appl. Phys. 90, 4224 (2001)

A. Dimoulas, A. Travlos, G. Vellianitis, N. Boukos, and K. Argyropoulos