Process Simulation

Our research activity focus on modeling and simulation of plasma processing. It covers both low (<1-10 Pa) and atmospheric pressure processes. It deals with the bulk phase of the plasma (reactors) as well as the interaction of plasma with surfaces. It handles all spatial scales of the events taking place during plasma processing, from the order of centimeters of a plasma reactor or a plasma jet to the order of micrometers or nanometers on a) a plasma-wetted rough surface or b) a conventional trench in microelectronics. It addresses micro- and nano-electronics, engineering of functional surfaces, as well as alternative applications of plasma processing in agriculture and biomedicine.

Besides plasma processing, chemical vapor deposition as well as the properties of and phenomena on plasma activated surfaces, such as the wetting behavior and condensation phenomena, have been studied.

Our tools are homemade, open source, and commercial code; the computational frameworks are usually hybrid, combining continuum and stochastic approaches. Our effort has yielded to two user-friendly software tools. The first for the study of chemical kinetics in the bulk plasma ( and the second for the study of profile evolution of micro- and nano-trenches or holes during plasma etching ( The current infrastructure for simulation is a computer cluster consisting of 11 workstations with a total of 316 cores and 1184 GB of RAM.