Research Interests : Development of nanostructured hybrid materials and metal oxides/polyoxometalates for applications in electronic devices and photocatalysis

Email : a.douvas@inn.demokritos.gr

Research Interests
Development of nanostructured hybrid materials and metal oxides/polyoxometalates for applications in electronic devices and photocatalysis
Position
Researchers
Telephone
+30 210 650 3242
CV English
About/Biography

Antonios M. Douvas received his Diploma in Chemical Engineering in 1995 and PhD Diploma in Photocatalysis-Photolithography in 2003 from the Department of Chemical Engineering of National Technical University of Athens. In 2004-2007 he received a postdoctoral scholarship of Researcher of D’ grade from the Institute of Microelectronics of National Centre for Scientific Research (NCSR) “Demokritos”. In the period 2007-2017 he worked as Permanent Research Staff at NCSR “Demokritos”: in 2007-2013 at the Institute of Microelectronics and in 2013-2017 at the Institute of Nanoscience and Nanotechnology. In 2017 he was appointed as Researcher of C’ grade (Assistant Researcher) at the Institute of Nanoscience and Nanotechnology of NCSR “Demokritos”. His current research interests include: (1) homogeneous/heterogeneous photocatalysis with polyoxometalates (POMs, and their analogues transition metal oxides, TMOs) for solar energy conversion and storage applications (e.g. photocatalytic production of hydrogen), (2) physicochemical investigation of POMs (and TMOs) in solid state interfaces for nanotechnology and organic optoelectronics applications (e.g. molecular electronic devices, organic photovoltaics (OPVs), organic light emitting diodes (OLEDs)), (3) synthesis/characterization of POMs, TMOs and complexes, and (4) nanostructure fabrication technologies and physicochemical investigation of photopolymeric materials based on POMs (or TMOs) for nanotechnology and art conservation applications. He has 64 publications in international scientific (peer-reviewed) journals and conference proceedings, and holds 3 patents.