Research Interests : Nanostructures for Nanoelectronics, Photonics and Sensors. Si nanowires, nanocrystals, porous Si. Microcapacitors for RF and energy storage, RF transmission lines, on-chip antennas, thermoelectrics

Email : a.nassiopoulou@inn.demokritos.gr

Research Interests
Nanostructures for Nanoelectronics, Photonics and Sensors. Si nanowires, nanocrystals, porous Si. Microcapacitors for RF and energy storage, RF transmission lines, on-chip antennas, thermoelectrics
Position
Researchers
Telephone
+30 210 650 3411
About/Biography

Androula G. Nassiopoulou is the Head of the Nano4NPS research group at NCSR Demokritos, Institute of Nanoscience and Nanotechnology, Athens, Greece. She holds a Physics diploma from the University of Athens (1972), MSc and PhD degrees from the University of Paris XI, France (1977 and 1980 respectively) and “Habilitation to Direct Research” (Doctorat d’Etat) from the University of Reims, France (1985). After 5 years as Associate Lecturer at the University of Reims, she moved to NCSR Demokritos, Athens, Greece in 1986 as senior researcher. She was appointed Director of the Institute of Microelectronics (IMEL) of NCSR Demokritos in 1996 and directed the Institute for 12 years, contributing to its establishment as a National Centre of Excellence in microsystems and nanotechnology, founding member of the European Institute of Nanoelectronics (Sinano). She served as Member of the Board of Management of NCSR Demokritos in 1996-2009 and as Vice President in 2001-2003, member of the Greek National Research Council (2001-2003), member of the EU Expert Advisory Group of NMP-FP6 (2003-2005), member of the Scientific Community Council of the European Nanoelectronics platform (ENIAC) (2008-2012), member of the Governing Board of the European Institute of Nanoelectronics (Sinano) (2011-2014) and President of Sinano General Assembly (2014-present). She founded the National Scientific Society “Micro & Nano”, devoted to Micro- and Nanoelectronics, Nanotechnologies, and MEMS and served as President for nine years and Vice President for three years. Her Academic record includes more than 300 papers in high impact factor journals, reviews and chapters in books, more than 80 invited talks, the edition of more than 20 special issues in international journals (Nanoscale Research Letters, Physica Status Solidi, Journal of Nanoscience and Nanotechnology, Microelectronic Engineering, IEEE Xplore etc), the organization/co-organization of more than 20 International Conferences and Workshops with edition of corresponding proceedings, including 5 editions of the PSST Conference, 4 editions of Micro&Nano Conference and 3 Symposia within E-MRS Conference. She supervised more than 20 PhD theses and coordinated or participated as partner in more than 35 funded projects (National, EU or projects funded by industry). Her current research interests are in nanostructures (materials and devices), nanoelectronics, nanotechnology, sensors and energy harvesting devices (solar cells, thermoelectrics), RF passive devices, (co-planar waveguides, inductors, filters, antennas, MIS/MIM capacitors), memory devices etc. She had major contributions in the following: Surface spectroscopy techniques (first to introduce energy loss spectroscopy in the reflection mode), Si nanostructures (quantum dots, Si nanowires (her group was the first to fabricate vertical Si nanowires on Si by lithography and etching (1995) and corresponding light emitting devices and study their properties), porous Si as a low thermal conductivity platform on the Si wafer, porous Si as a local substrate for on-chip RF isolation, Si nanocrystal memories, low-cost Si solar cells using metal assisted chemical etching etc. Androula Nassiopoulou is UNESCO Laureate, awarded the “UNESCO medal for outstanding contribution to nanoscience and nanotechnologies” in a ceremony held in Paris on 22 November 2018 (https://en.unesco.org/news/eighth-unesco-medals-contributions-development-nanoscience-and-nanotechnologies)

Representative Publications
1. Hourdakis, E., Casanova, A., Larrieu, G., and Nassiopoulou, A. G., Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics, Solid State Electronics 143, 77-82 (2018)
2. Leontis, I., Botzakaki, M. A., Georga, S. N. and Nassiopoulou, A. G. Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n‑type c‑Si Solar Cells. ACS Omega, 3, 10898-10906 (2018)
3. Sarafis, P. and Nassiopoulou, A. G. Porous Si as a substrate for the monolithic integration of RF and millimeter-wave passive devices (transmission lines, inductors, filters, and antennas): Current state-of art and perspectives. Applied Physics Reviews 4, 031102 (2017)
4. Hourdakis, E. and Nassiopoulou, A. G. Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes. Appl. Phys. Lett. 111, 033503 (2017)
5. Valalaki, K., Benech, Ph. And Nassiopoulou A. G. High Seebeck Coefficient of Porous Silicon: Study of the porosity Dependence, Nanoscale Research Letters, 11, 201, (2016)
6. Valalaki, K., Vouroutzis, N. and Nassiopoulou A. G. Significant enhancement of the thermoelectric figure of merit of polycrystalline Si films by reducing grain size. J. Phys. D: Appl. Phys., 49, 315104, (2016)
7. Sarafis, P., Nassiopoulou, A.G. Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz, Nanoscale Research Letters, 9, 418 (2014)
8. Valalaki, K., Nassiopoulou, A. G. Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K, Nanoscale Research Letters, 9, 318 (2014)
9. Nassiopoulou A. G. Silicon nanocrystals in SiO2 thin layers. Chapter in Encyclopedia of Nanoscience and Nanotechnology, edited by H. S. Nalwa (American Scientific Publishers, California, 9, 793-813, (2004)
10. Kaltsas G. and Nassiopoulou, A. G. Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation. Sens. & Actuators A, 76(1-3), 133, (1999)