Research Interests : plasma processes, microfluidics, Lab-on-chip systems, interfacial phenomena, multiscale modeling & simulation

Email : g.kokkoris@inn.demokritos.gr

Research Interests
plasma processes, microfluidics, Lab-on-chip systems, interfacial phenomena, multiscale modeling & simulation
Position
Research Associates
Telephone
+30 210 650 3238
About/Biography
George Kokkoris is a Research Associate at the Institute of Nanoscience & Nanotechnology (INN). He received the BSc in Chemical Engineering (1998) from the National Technical University of Athens (NTUA), the MSc in Microelectronics from the department of Informatics and Telecommunications of the National and Kapodistrian University of Athens (2000), and the PhD from the school of Chemical Engineering of NTUA (2005). From 2005 to 2014, he was with the Institute of Microelectronics of NCSR Demokritos and the School of Chemical Engineering of NTUA. The focus of his research has been on a) plasma etching and chemical vapor deposition processes for microelectronics and nanofabrication, b) microfluidic devices (e.g. microreactors for DNA amplification and micromixers) and Lab-on-a-Chip systems, and c) wetting behavior of patterned and rough surfaces. He has participated in 17 EU (e.g. NanoPlasma, MD3, Hydrofakir, LoveFood, LoveFood2Market, Harmonic) and national projects (two of them as the principal investigator). He is the author or co-author of 71 peer-reviewed articles [h-index=19 (google scholar), 17 (scopus)], 3 patent applications, and more than 100 conference communications (8 invited). He has been teaching or co-teaching 4 courses in Master's programs and he supervised or has been supervising 6 PhD theses and 17 Master's theses.
Google scholar profile: https://scholar.google.com/citations?user=cIsE5yIAAAAJ&hl=en
Scopus profile: http://www.scopus.com/authid/detail.uri?authorId=6603162466

Publications
1) Memos, G., Lidorikis, E., and Kokkoris, G.* The interplay between surface charging and microscale roughness during plasma etching of polymeric substrates, J. Appl. Phys. 123, 073303 (2018).
DOI: 10.1063/1.5018313

2) Mouchtouris, S. and Kokkoris, G.* Multiscale modeling of low pressure plasma etching processes: Linking the operating parameters of the plasma reactor with surface roughness evolution, Plasma Process. Polym. 14, 1600147 (2017).
DOI: 10.1002/ppap.201600147

3) Mouchtouris, S. and Kokkoris, G.* A hybrid model for low pressure inductively coupled plasmas combining a fluid model for electrons with a plasma-potential-dependent energy distribution and a fluid-Monte Carlo model for ions, Plasma Sources Sci. Technol. 25, 025007 (2016).
DOI: 10.1088/0963-0252/25/2/025007

4) Papadopoulos, V. E., Kokkoris, G.,* Kefala, I. N., and Tserepi, A. Comparison of continuous-flow and static-chamber μPCR devices through a computational study: the potential of flexible polymeric substrates, Microfluid. Nanofluid. 19, 867 (2015).
DOI: 10.1007/s10404-015-1613-1

5) Moschou, D., Vourdas, N., Kokkoris, G., Papadakis, G., Parthenios, J., Chatzandroulis, S., and Tserepi A.* All-plastic, low-power, disposable, continuous-flow PCR chip with integrated microheaters for rapid DNA amplification, Sensors & Actuators: B. Chemical 199, 470 (2014).
DOI: 10.1016/j.snb.2014.04.007

6) Kokkoris, G.,* and E. Gogolides, E. The potential of ion-driven etching with simultaneous deposition of impurities for inducing periodic dots on surfaces, J. Phys. D: Appl. Phys. 45, 165204 (2012).
DOI: 10.1088/0022-3727/45/16/165204

7) Cheimarios, N., Kokkoris, G.,* and Boudouvis, A. G. Multiscale modeling in chemical vapor deposition processes: Coupling reactor scale with feature scale computations, Chem. Eng. Sci. 65, 5018 (2010).
DOI: 10.1016/j.ces.2010.06.004

8) Kokkoris, G.,* Gogolides, E., Goodyear, A., Cooke, M. A global model for C4F8 plasmas coupling gas phase and wall surface reaction kinetics, J. Phys. D: Appl. Phys. 41, 195211 (2008).
DOI: 10.1088/0022-3727/41/19/195211

9) Kokkoris, G.,* Constantoudis, V., Angelikopoulos, P., Boulousis, G., and Gogolides, E. Dual nano-scale roughness on Si plasma etched surfaces: The role of etch inhibitors, Phys. Rev. B 76, 193405 (2007).
DOI: 10.1103/PhysRevB.76.193405

10) Kokkoris, G.,* Tserepi, A., Boudouvis, A. G., and Gogolides, E. Simulation of SiO2 and Si feature etching for microelectronics and MEMS fabrication: a combined simulator coupling modules of surface etching, local flux calculation, and profile evolution, J. Vac. Sci. Technol. A 22, 1896 (2004).
DOI: 10.1116/1.1738660