Research Interests : Materials, nanoelectronics, sensors

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Research Interests
Materials, nanoelectronics, sensors
Post Doc
+30 210 650 3137
Emmanouel Hourdakis was born on July 28, 1978. He received his B.Sc. degree in physics from the University of Crete in 2001. He received his M.S. (2004) and Ph.D. (2007) degrees in Physics from the University of Maryland. Most of his Ph.D. thesis research was conducted at the National Institute of Standards and Technology (NIST) at Gaithersburg, USA.
Currently he is a post doctoral researcher at the Institute of Nanoscience and Nanotechnology (INN) of NCSR Demokritos in Greece. His interests focus on the design, fabrication and characterization of Si-based microelectronic and thermoelectric devices and the electrical properties of high-k dielectrics. His expertise includes deposition techniques for thin films (thermal evaporation, sputtering), electrochemical creation of nanostructured materials (porous alumina, porous Si), batch Si processing techniques (photolithography, e-beam lithography, chemical and plasma etching of materials) and characterization techniques (electrical, Scanning Electron Microscopy). He has co-authored 32 publications in international journals, 1 book chapter and has 18 presentations in national and international conferences, 3 of which were invited.

Sample publications

Hourdakis E. and Nassiopoulou A.G. High-density MIM capacitors with porous anodic alumina dielectric. IEEE Transactions on Electron Devices 57, pp. 2679-2683 (2010) DOI: 10.1109/TED.2010.2058350

Hourdakis E. and Nassiopoulou A.G. Charge-trapping MOS memory structure using anodic alumina charging medium. Microelectronic Engineering 88, 1573-1575 (2011) DOI: 10.1016/j.mee.2011.03.015

Hourdakis E., Sarafis P. and Nassiopoulou A.G. Novel Air Flow Meter for an Automobile Engine Using a Si Sensor with Porous Si Thermal Isolation. Sensors 12, 14838-14850 (2012) DOI: 10.3390/s121114838

Hourdakis E. and Nassiopoulou A.G. A Thermoelectric generator using porous Si thermal isolation. Sensors 13, 13596-13608 (2013) DOI: 10.3390/s131013596

Hourdakis E. and Nassiopoulou A.G. Direct Al-imprinting method for increased effective electrode area in MIM capacitors. IEEE Transactions on Electron Devices 63, 746-750 (2016) DOI: 10.1109/TED.2015.2503803

Hourdakis E. and Nassiopoulou A.G. Method for Al thin film surface nanostructuring using Al imprinting and anodic oxidation: Application to a high capacitance density Metal-Insulator-Metal capacitor. Thin Solid Films 621, 36-41 (2017) DOI: 10.1016/j.tsf.2016.11.009

Hourdakis, E. and Nassiopoulou, A.G. Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3dielectric and imprinted electrodes. Applied Physics Letters 111, art. No. 033503 (2017) DOI: 10.1063/1.4993898

Hourdakis E., Koutsoureli M., Papaioannou G. and Nassiopoulou A.G. Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors. Journal of Applied Physics 123, art. No. 215301 (2018) DOI: 10.1063/1.5026166

Hourdakis E., Kaidatzis A., Niarchos D. and Nassiopoulou A.G. Voltage-controlled negative differential resistance in metal-sputtered alumina-Si structures. Journal of Physics D: Applied Physics, accepted for publication (2018)