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Dr. P. Normand received his M.S. degree in microelectronics and microcomputing from the laboratory of Solid State Physics of ENS-Paris VII University in 1986. His M.S. thesis was on the study of misfit stress relaxation in CMOS wafers by X-ray diffraction (IBM France, Corbeil-Essonnes). He received his Ph.D. degree in Physics of Semiconductors from the National Polytechnic Institute of Grenoble in 1992. His doctoral thesis focused on the diffusion of dopants in silicon and SIMOX wafers. Since then, he is with IMEL (until 2012) and INN (from 2012)/NCSRD, where he holds the position of Director of Research. Since 1999, he has been in charge of the research group: Materials and Devices for Memory and Emerging Electronics. He was the principal investigator for the former Institute of Microelectronics (IMEL) of NCSRD in the EC projects: Esprit/Fasem (1997-2000) and Growth/Neon (2001-2004) with focus on single-electron memories and nanocrystal memory devices, respectively. He also participated in the EC project IST-FET/Fracture (Nanoelectronic devices and fault-tolerant architectures, 2000-2003) coordinated by IMEL and the EC Strep/Micro2DNA project (2006-2009) devoted to the development of capacitive DNA sensor arrays. He was WP leader in the Regional Potential EC project (REGPOT- 2009-2013), Micro & Nano Systems Center of Excellence (MiNaSys-CoE), aiming to enhance IMEL facilities and know-how in Nanotechnology, Nanoelectronics and MEMS. He is currently in charge of the Excellence GSRT project NanoWire Memory (2014-2015) and is involved in four bilateral/national projects related to the development of vertical III-V SC nanowires and related devices (Nanowire Thales), organic devices for radiation sensing (Archimedes III) and resistive memories (G-ReRAM & NanoARM). He has (co)authored more than 130 scientific publications (including 89 regular articles, 3 book chapters and 41 papers in international conference proceedings) and holds 6 patents. His research interests include the development of inorganic/organic memory devices, nanostructured materials for electronics, silicon nanotechnology and micromachining, as well as integrated sensors and MEMS.