Hourdakis, E., Pepponi, G., Barozzi, M. and Nassiopoulou, A.G., Simple method for determining Si p-n junction depth using anodization Microelectronic Engineering, Volume 244-246, Article Number: 111558, 2021 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress Physica Status Solidi (A) Applications and Materials Science, Volume 217, Article Number: 1900950, 2020 [doi]

Hourdakis, E., Kaidatzis, A., Niarchos, D. and Nassiopoulou, A.G., Voltage-controlled negative differential resistance in metal-sputtered alumina-Si structures Journal of Physics D: Applied Physics, Volume 52, Article Number: 085101, 2019 [doi]

Hourdakis, E., Casanova, A., Larrieu, G. and Nassiopoulou, A.G., Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics Solid-State Electronics, Volume 143, Pages: 77-82, 2018 [doi]

Hourdakis, E., Koutsoureli, M., Papaioannou, G. and Nassiopoulou, A.G., Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors Journal of Applied Physics, Volume 123, Article Number: 215301, 2018 [doi]

Hourdakis, E., Nassiopoulou, A.G., Casanova, A. and Larrieu, G., Model 3D MOS capacitor system using regular arrays of vertical Si nanowires Pages: 124-127, Article Number: 7962618, 2017 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes Applied Physics Letters, Volume 111, Article Number: 033503, 2017 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Direct Al-imprinting method for increased effective electrode area in MIM capacitors IEEE Transactions on Electron Devices, Volume 63, Pages: 746-750, Article Number: 7359184, 2016 [doi]

Hourdakis, E., Travlos, A. and Nassiopoulou, A.G., High-performance MIM capacitors with nanomodulated electrode surface IEEE Transactions on Electron Devices, Volume 62, Pages: 1568-1573, Article Number: 7065297, 2015 [doi]

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Disclaimer: Publications of INN count all publications involving members of its constituent groups, including those authored when members were working in other Institutions (i.e. without INN affiliation). We apologize for this inconvenience due to method used to find group publications, and declare that the Institute has no claims over publications involving non-INN affiliations.

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