Atomic Layer Etching (ALE) is an advanced etch technique that allows for excellent depth control on shallow features. As device feature size reduces further and further ALE is required to achieve the accuracy required for peak performance. High fidelity pattern transfer (etching) is essential for the fabrication of todays advanced microelectronics devices. As features shrink to sub-10 nm levels, and novel devices make use of ultra-thin 2D materials, there is a n increasing need for atomic-scale fidelity.

Applications

Dry etching of metals: Al, Cr, Si and polysilicon, Cu, adhesion metals such as Ti, Cr and Barrier metals such as Ni, Co, Ru. Noble metals such as Au, Pt, Pd, Ag.

Dry etching of oxides: SiO₂, ZnO, TiO₂, SnO, Indium Tin Oxide (ITO), CrO, NiO, Al₂O₃ (ALD deposited γ-Al₂O₃), HfO₂, ZrO₂, Y₂O₃, Ta₂O₅, WO₃, MoO₃, and Silicon Carbide (SiC).

Dry etching of Nitrides, Sulfides and other Compounds: Si₃N₄, TaN, TiN, AlN, HfN, GaN, AlGaN, MoS₂, WS₂, MoTe₂, MoSe₂.

Polymer film and polymer plate etching, as well as etching of organic materials.

Type

Mode capabilities: Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE) and Atomic Layer Etching (ALE).Coil Frequency (ICP)

13.56 MHz

Coil Power (ICP)

0 – 3000 W

Electrode Frequency (CCP)

13.56 MHz (HF) and 350 – 460 kHz (LF)

Electrode Power (CCP)

0 – 600 W

Electrode temperature

-30 – 400 οC

Pressure

1 – 100 mTorr

Gases

Cl₂, BCl₃, CH₄, H₂, O₂, Ar, CF₄, C₄F₈, SF₆ and He

Samples Dimmensions

A wide range of wafer sizes can be processed, from small wafer pieces (1x1 cm2) up to 200 mm (8”) diameter