ABOUT/BIOGRAPHY

George Pissanos has been a research scientist at the Epitaxy and Surface Science Laboratory (ESSL) at the Institute of Nanoscience and Nanotechnology of the National Center for Scientific Research "Demokritos" since June 2025.

He graduated from the School of Applied Mathematics and Physical Sciences of the National Technical University of Athens in 2021. In his undergraduate thesis, he studied the "Design of gas sensors for the detection of environmental pollutants."

He then pursued postgraduate studies in the Interdepartmental Postgraduate Program of the National Technical University of Athens "Microsystems and Nanodevices," from which he graduated in 2023. In his master's thesis, he studied "Nitride memristors with different stoichiometries." The thesis was carried out at the Institute of Nanoscience and Nanotechnology of the National Center for Scientific Research "Demokritos." During the thesis, the influence of the stoichiometry of silicon nitride memristors on their optical and electrical properties was studied by performing electrical and optical characterization through ellipsometry measurements, current-voltage (I-V), impedance spectroscopy, and capacitance-voltage (C-V) measurements.

As a research scientist at the Epitaxy and Surface Science Laboratory, he is working on the European project FIXIT, focusing on the fabrication and electrical characterization of Ferroelectric tunnel junctions and ferroelectric memristors. He has contributed to two publications in international journals in the fields of nanotechnology and solid-state electronics.

PUBLICATIONS

A.E. Mavropoulis, G. Pissanos, N. Vasileiadis, P. Normand, G.Ch. Sirakoulis and P. Dimitrakis, SiNx RRAMs performance with different stoichiometries Solid-State Electronics, Volume 230, Pages: 109252, 2025 [doi]

Mavropoulis, A.E., Kanellopoulos, I., Pissanos, G., Samara, G., Vasileiadis, N., Stavroulakis, E., Normand, P., Sirakoulis, G. Ch. and Dimitrakis, P., Breakdown characteristics of SiNx with different stoichiometries for resistive memories* 2025 IEEE 20th Nanotechnology Materials and Devices Conference (NMDC), Pages: 362-365, 2025 [doi]

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