ANNEALSYS CVD reactor
CVD03
CONTACT PERSON:
Dr. Athanasios Dimoulas
EMAIL:
a.dimoulas@inn.demokritos.gr
CVD03
CONTACT PERSON:
Dr. Athanasios Dimoulas
EMAIL:
a.dimoulas@inn.demokritos.gr
CVD/Chemical Vapor Deposition
Tool
ANNEALSYS CVD reactor
Applications
CVD growth
Technical Specifications
ANNEALSYS CVD reactor for graphene growth:
-fully automated
-4-inch cold wall
-equipped with graphite susceptor
-growth up to 1200°C-pressure range 2·10-2Torr up to atmospheric
Other Capabilities: Rapid thermal processing with a rump up rate of 200°C/s and a fast-cooling rate.