FTP / Furnace Thermal Processing

Tools
(a) 2 systems x 3 horizontal furnace stacks, Tempress Model Omega Junior, (b) 1 hot system x 2 horizontal stacks, Semican Equipment

Applications
Thermal treatments at atmospheric pressure under oxidizing or neutral/forming gas ambient. The former case (thermal oxidation) is widely used for the growth of silicon dioxide (SiO2) layers on Si substrates through the chemical reaction of Si with an oxidant gas like O2, N2O or water vapour (H2O). Typically, wet oxides serve as masks against dopant implantationor passivation layers, while dry oxide films typically serve as gate insulators in CMOS technology. Annealing under neutral ambient (e.g., N2) is commonly used for post-implantation dopant activation while annealing in forming gas (N2/H2) serves as a post-metallization step.

Technical Specifications
•System TypeHorizontal, Hot Wall, Quartz Tube HSQ-300
•Temperature Range300 to 1100oC (± 0,1oC)
•Ramp Up / Down Typical: 10oC/min (5oC/min up to 20oC/min)
•Pressure Atmospheric
•GassesO2, N2O, H2O, N2/H2 (forming gas)
•Sample dimensions From 4 ́ ́wafer down to 1 cm x 1 cm square samples
•Operating environment Clean-room ISO 6 (Class 1000) / ISO 5 (Class 100) at loading station