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RESEARCH INTERESTS

TFTs in polySi and transition metal chalcogenides, thin film sensors, microsystems, new field effect structures

ABOUT/BIOGRAPHY

Dimitrios N. Kouvatsos received his Ph.D. in Electrical Engineering from Lehigh University (USA) in 1991. During 1992 he worked as a Visiting Research Scientist at its Sherman Fairchild Center on TFTs for AMLCD applications; he was also an Adjunct Lecturer at the Department of Electrical Engineering. Since 1994 he is with NCSR “Demokritos”, a Research Director since 2009. He has published 107 papers in research journals and proceedings with over 700 citations, has given 80 conference presentations, is reviewer in 20 journals and has contributed to organizing all ESREF conferences since 2002. He has directed five international projects, two with Sharp Laboratories of America grants on optimization of polySi TFTs in advanced annealed films, and has supervised several Ph.D. dissertations and M.Sc. theses. His research interests include TFTs in polySi and transition metal chalcogenides, integrated microsystems utilizing sensors/detectors and TFT addressing, displays and new field-effect device structures.

PUBLICATIONS

Papadimitropoulos, G., Vourdas, N., Kontos, A., Vasilopoulou, M., Kouvatsos, D.N., Boukos, N., Gasparotto, A., Barreca, D. and Davazoglou, D., Hot-wire vapor deposition of amorphous MoS2 thin films Physica Status Solidi (C) Current Topics in Solid State Physics, Volume 12, Pages: 969-974, 2015 [doi]

Kouvatsos, Dimitrios N, Papadimitropoulos, George, Spiliotis, Thanassis, Vasilopoulou, Maria, Barreca, Davide, Gasparotto, Alberto and Davazoglou, Dimitris, Electrical characteristics of vapor deposited amorphous MoS2 two-terminal structures and back gate thin film transistors with Al, Au, Cu and Ni-Au contacts physica status solidi (c), Wiley Online Library, Volume 12, Pages: 975–979, 2015 [doi]

Tsevas, Spiros, Vasilopoulou, Maria, Kouvatsos, Dimitrios N, Speliotis, Thanassis and Niarchos, Dimitris, Characteristics of MOS diodes fabricated using sputter-deposited W or Cu/W films Microelectronic engineering, Elsevier, Volume 83, Pages: 1434–1437, 2006 [doi]

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