Condensed Matter Physics, MBE Growth, Ferroelectric Hafnia, Electrical and Material Characterization, Neuromorphic Devices - Computing


Nikitas Siannas graduated the Physics Department of the University of Athens (BSc 2015, MSc 2017) and started his PhD thesis in the field of neuromorphic memories in 2020 from the Physics Department of the National Kapodistrian University of Athens (UoA). Nikitas Siannas as undergraduate student studied the electrical properties of amorphous Silicon Nitride insulating thin films as a function both of the stoichiometry and the temperature of the material. Presently, he has been employed in the National Centre for Scientific Research “Demokritos”, as a research scientist in the Institute of Nanoscience and Nanotechnology (INN/NCSRD) since 2020. He works as a PhD student at the Epitaxy and Surface Science Laboratory under the supervision of Dr. Athanasios Dimoulas. His research interests are focused on the fabrication, the physics and the characterization of thin films and devices in the field of non-volatile memory devices using HfO2 doped with Zirconium. The purpose of the project is the fabrication of the optimum material in order to be integrated in neuromorphic applications. The project is funded by Horizon 2020 – ICT – BeFerroSynatptic, BEOL technology platform based on ferroelectric synaptic devices for advanced neuromorphic processors. He has 3 presentations at international conferences and participations in 2 published papers in international peer-reviewed journal proceeding volumes on the electrical characterization of insulating thin films and the physics of 2D materials.




Tsipas, P., Pappas, P., Symeonidou, E., Fragkos, S., Zacharaki, C., Xenogiannopoulou, E., Siannas, N. and Dimoulas, A., Epitaxial HfTe2Dirac semimetal in the 2D limit APL Materials, Volume 9, Article Number: 101103, 2021 [doi]

Koutsoureli, M., Siannas, N. and Papaioannou, G., Temperature accelerated discharging processes through the bulk of PECVD silicon nitride films for MEMS capacitive switches Microelectronics Reliability, Volume 76-77, Pages: 631-634, 2017 [doi]

Skip to content