RESEARCH INTERESTS

Micro-Nanoelectronics, Non-Volatile Memories, Semiconductor Device Technology, Organic Electronics

ABOUT/BIOGRAPHY

Dr. P. Normand received his M.S. degree in microelectronics and microcomputing from the laboratory of Solid State Physics of ENS-Paris VII University in 1986. His M.S. thesis was on the study of misfit stress relaxation in CMOS wafers by X-ray diffraction (IBM France, Corbeil-Essonnes). He received his Ph.D. degree in Physics of Semiconductors from the National Polytechnic Institute of Grenoble in 1992. His doctoral thesis focused on the diffusion of dopants in silicon and SIMOX wafers. He was post-doctoral scientist (1993-1995), Researcher (1995-1999), Senior Researcher (1999-2004) and Director of Research (2004-2012) at the Institute of Microelectronics (IMEL) of NCSR Demokritos. Since then, he is Director of Research at INN/NCSRD. From 1995, he served as coordinator of the research group, “Materials and Devices for Memory and Emerging Electronics” (former “Silicon nanocrystal memory devices” group).

He was the principal investigator (PI) for IMEL/NCSRD in the EC projects: Esprit/Fasem (1997-2000) and Growth/Neon (2001-2004) with focus on single-electron memories and nanocrystal memory devices, respectively. He also participated in the EC project IST-FET/Fracture (Nanoelectronic devices and fault-tolerant architectures, 2000-2003) coordinated by IMEL and the EC Strep/Micro2DNA project (2006-2009) devoted to the development of capacitive DNA sensor arrays. He was WP leader in the Regional Potential EC project (REGPOT- 2009-2013), Micro & Nano Systems Center of Excellence (MiNaSys-CoE), aiming to enhance IMEL facilities and know-how in Nanotechnology, Nanoelectronics and MEMS. He was in charge of the Excellence GSRT project NanoWire Memory (2014-2015) and PI / Co-I in others ESA / bilateral / national projects, main of them related to the development of 2D Si-nanocrystal layers by Plasma Immersion Ion-Implantation (PIII) for non-volatile memories (2006-2008, PI), III-Nitride quantum dots-RTDs (2008-2009, Co-I), the growth of vertical III-V nanowires on Si substrates (Nanowire project, 2012-2015, Co-I), organic devices for radiation sensing (Archimedes III, 2012-2015, Co-I), resistive memories (G-ReRAM & NanoARM, 2013-2015, Co-I), quantum nanoelectronic systems (Einstein, 2017-2020, Co-I), and heterogeneous integration of III-V devices with Si (Radar, 2019-2021, Co-I). Since 2013, he is involved in the setting-up of the National Research Infrastructure in Nanotechnology, Advanced Materials and Micro/Nanoelectronics (Innovation-EL) coordinated by INN. Innovation-EL is based on a core Partnership of eight Research and Higher Education Institutions distributed across five regions of Greece.

He has served as a Member of the Scientific Advisory Board of IMEL (2003-2004, 2009-2010) and INN (2012-2014), as Guest Co-Editor and / or Program Vice-Chairperson of international conferences (INFOS 2007, ESSDERC 2009, MNE 2009) and Reviewer for a number of scientific journals. He also served as a Member of the Governing Board of the School of Pedagogical & Technological Education (ASPETE, April 2016-July 2020) as appointed by the Minister of Education, Research and Religious Affairs with the mission of strengthening and promoting ASPETE's research activities.

He has (co)authored more than 150 scientific publications, including 103 regular articles, 3 book chapters and 51 papers in international conference proceedings, and holds 6 patents. His research interests include (1) the development of novel materials (nanocrystals, nanowires, electrolyte systems, graphene, high-k dielectrics, metal oxides) for advanced inorganic and organic electronics, (2) the design, fabrication and testing of low-voltage, low-power devices with focus on nonvolatile charge-trapping and resistance-state memories, (3) optimization for performance and manufacturability and (4) technology transfer to industry.

PUBLICATIONS

Vasileiadis, N., Ntinas, V., Fyrigos, I.-A., Karamani, R.-E., Ioannou-Sougleridis, V., Normand, P., Karafyllidis, I., Sirakoulis, G.Ch. and Dimitrakis, P., A new 1P1R image sensor with in-memory computing properties based on silicon nitride devices Volume 2021-May, Article Number: 9401586, 2021 [doi]

Vasileiadis, N., Karakolis, P., Mandylas, P., Ioannou-Sougleridis, V., Normand, P., Perego, M., Komninou, P., Ntinas, V., Fyrigos, I.-A., Karafyllidis, I., Sirakoulis, G.C. and Dimitrakis, P., Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping IEEE Transactions on Nanotechnology, Volume 20, Pages: 356-364, Article Number: 9403953, 2021 [doi]

Kapetanakis, Eleftherios, Katsogridakis, Charalampos, Dimotikali, Dimitra, Argitis, Panagiotis and Normand, Pascal, Ion-Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two-Terminal Devices Advanced Electronic Materials, Volume 6, Pages: 2000238, 2020 [doi]

Karakolis, P., Normand, P., Dimitrakis, P., Ntinas, V., Fyrigos, I.-A., Karafyllidis, I. and Sirakoulis, G.C., Future and emergent materials and devices for resistive switching Article Number: 8605885, 2019 [doi]

Karakolis, P., Pallaki, P., Sirakoulis, G., Karafyllidis, I.G., Normand, P., Georgoussi, Z. and Dimitrakis, P., Graphene material for neuromorphic and neurohybrid systems Opera Medica et Physiologica, Volume 4, Pages: 86-87, 2018 [doi]

Smyrnakis, A., Dimitrakis, P., Normand, P. and Gogolides, E., Fabrication of axial p-n junction silicon nanopillar devices and application in photovoltaics Microelectronic Engineering, Volume 174, Pages: 74-79, 2017 [doi]

Bolomyti, E, Glezos, N, Dimitrakis, P, Normand, P, Benassayg, G and Ioannou-Sougleridis, V, Charge retention analysis of Si implanted and wet oxidized SONOS structures Microelectronic Engineering, Elsevier, Volume 159, Pages: 75–79, 2016 [doi]

Nikolaou, N., Dimitrakis, P., Normand, P., Speliotis, T., Kukli, K., Niinistö, J., Mizohata, K., Ritala, M., Leskelä, M. and Ioannou-Sougleridis, V., MANOS performance dependence on ALD Al2O3 oxidation source Microelectronic Engineering, Volume 159, Pages: 127-131, 2016 [doi]

Kruse, J.E., Lymperakis, L., Eftychis, S., Adikimenakis, A., Doundoulakis, G., Tsagaraki, K., Androulidaki, M., Olziersky, A., Dimitrakis, P., Ioannou-Sougleridis, V., Normand, P., Koukoula, T., Kehagias, T., Komninou, P., Konstantinidis, G. and Georgakilas, A., Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy Journal of Applied Physics, Volume 119, Article Number: 224305, 2016 [doi]

Khomenkova, L., Normand, P., Gourbilleau, F., Slaoui, A. and Bonafos, C., Optical, structural and electrical characterizations of stacked Hf-based and silicon nitride dielectrics Thin Solid Films, Volume 617, Pages: 143-149, 2016 [doi]

Kapetanakis, Eleftherios, Gkoupidenis, Paschalis, Saltas, Vassilios, Douvas, Antonios M, Dimitrakis, Panagiotis, Argitis, Panagiotis, Beltsios, Konstantinos, Kennou, Stella, Pandis, Christos, Kyritsis, Apostolos and others, Direct Current Conductivity of Thin-Film Ionic Conductors from Analysis of Dielectric Spectroscopic Measurements in Time and Frequency Domains The Journal of Physical Chemistry C, American Chemical Society, Volume 120, Pages: 21254–21262, 2016 [doi]

Khomenkova, L., Normand, P., Gourbilleau, F., Slaoui, A. and Bonafos, C., High-k MNOS-like stacked dielectrics for non-volatile memory application Journal of Nano Research, Volume 39, Pages: 121-133, 2016 [doi]

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