MBE/Molecular Beam Epitaxy

Tool
DCA MBE System

Applications
Epitaxial growth 

Technical Specifications 
MBE system by DCA, consisting of: 

• a vertical chamber 
• a 3-axis manipulator (1000°C) 
• a mass spectrometer (residual gas analyzer) 
• two high temperature (~2000°C) effusion cells 
• One cracker cell for Te evaporation 
• One Al cell 
• two e-gun evaporators for refractory metal evaporation 
• a remote RF plasma source for plasma-assisted epitaxy/deposition of oxides and nitrides 

Additional Tools 

The MBE system is coupled to a SPECS Photoelectron Spectroscopy system for ARPES, UPS and XPS measurements and to an Omicron STM system, while its main chamber is complemented by Reflection High-Energy Electron Diffraction (RHEED) for the in-situ, real-time monitoring of the grown surfaces.