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RESEARCH INTERESTS

Development of nanostructured materials, Electrical properties of materials, Design, fabrication and characterization of microelectronic devices, micro-sensors and systems

ABOUT/BIOGRAPHY

Emmanouel Hourdakis was born on July 28, 1978. He received his B.Sc. degree in physics from the University of Crete in 2001. He received his M.S. (2004) and Ph.D. (2007) degrees in Physics from the University of Maryland. Most of his Ph.D. thesis research was conducted at the National Institute of Standards and Technology (NIST) at Gaithersburg, USA. From 2009 to 2024 he worked as a post-doctoral researcher at the Institute of Nanoscience and Nanotechnology (INN) of NCSR Demokritos in Greece. In 2024 he joined the faculty of the School of Electrical and Computer Engineering (ECE) of the National Technical University of Athens (NTUA) in Greece.

His interests focus on the design, fabrication and characterization of Si-based microelectronic and thermoelectric devices and the electrical properties of high-k dielectrics. His expertise includes deposition techniques for thin films (thermal evaporation, sputtering), electrochemical creation of nanostructured materials (porous alumina, porous Si), batch Si processing techniques (photolithography, e-beam lithography, chemical and plasma etching of materials) and characterization techniques (electrical, Scanning Electron Microscopy). He has co-authored a significant number of publications in international journals, 1 book chapter and has several presentations at national and international conferences, 3 of which were invited.

PUBLICATIONS

V. Zacharia, A. Bardakas, A. Anastasopoulos, M.A. Moustaka, E. Hourdakis and C. Tsamis, Design of a flexible tactile sensor for material and texture identification utilizing both contact-separation and surface sliding modes for real-life touch simulation Nano Energy, Volume 127, Pages: 109702, 2024 [doi]

Hourdakis, E, Bardakas, A, Segkos, A, Tsilivaki, S and Gardelis, S and Tsamis, C, Tunable and white light photoluminescence from ZnO on porous Si with the addition of carbon quantum dots Nanotechnology, Volume 34, 2023 [doi]

Hourdakis, E., Pepponi, G., Barozzi, M. and Nassiopoulou, A.G., Simple method for determining Si p-n junction depth using anodization Microelectronic Engineering, Volume 244-246, Article Number: 111558, 2021 [doi]

Hourdakis, E., Kaidatzis, A. and Niarchos, D., "Shadow effect" photodetector with linear output voltage vs light intensity Journal of Applied Physics, Volume 129, Article Number: 48655, 2021 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress Physica Status Solidi (A) Applications and Materials Science, Volume 217, Article Number: 1900950, 2020 [doi]

Hourdakis, E., Kaidatzis, A., Niarchos, D. and Nassiopoulou, A.G., Voltage-controlled negative differential resistance in metal-sputtered alumina-Si structures Journal of Physics D: Applied Physics, Volume 52, Article Number: 085101, 2019 [doi]

Hourdakis, E., Casanova, A., Larrieu, G. and Nassiopoulou, A.G., Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics Solid-State Electronics, Volume 143, Pages: 77-82, 2018 [doi]

Hourdakis, E., Koutsoureli, M., Papaioannou, G. and Nassiopoulou, A.G., Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors Journal of Applied Physics, Volume 123, Article Number: 215301, 2018 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Method for Al thin film surface nanostructuring using Al imprinting and anodic oxidation: Application to a high capacitance density metal-insulator-metal capacitor Thin Solid Films, Volume 621, Pages: 36-41, 2017 [doi]

Hourdakis, E., Nassiopoulou, A.G., Casanova, A. and Larrieu, G., Model 3D MOS capacitor system using regular arrays of vertical Si nanowires Pages: 124-127, Article Number: 7962618, 2017 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes Applied Physics Letters, Volume 111, Article Number: 033503, 2017 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Direct Al-imprinting method for increased effective electrode area in MIM capacitors IEEE Transactions on Electron Devices, Volume 63, Pages: 746-750, Article Number: 7359184, 2016 [doi]

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