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Vasileiadis, N., Ntinas, V., Karakolis, P., Dimitrakis, P. and Sirakoulis, G.Ch., On Edge Image Processing Acceleration with Low Power Neuro-Memristive Segmented Crossbar Array Architecture International Journal of Unconventional Computing, Volume 17, Pages: 173-199, 2022 [doi]

Mavropoulis, A., Vasileiadis, N., Theodorou, C., Sygellou, L., Normand, P., Ch. Sirakoulis, G. and Dimitrakis, P., Effect of SOI substrate on silicon nitride resistance switching using MIS structure Solid-State Electronics, Volume 194, Article Number: 108375, 2022 [doi]

Fyrigos, I.-A., Ntinas, V., Vasileiadis, N., Sirakoulis, G.C., Dimitrakis, P., Zhang, Y. and Karafyllidis, I.G., Memristor Crossbar Arrays Performing Quantum Algorithms IEEE Transactions on Circuits and Systems I: Regular Papers, Volume 69, Pages: 552-563, 2022 [doi]

Tsakalos, K.-A., Ntinas, V., Karamani, R.-E., Fyrigos, I.-A., Chatzinikolaou, T.P., Vasileiadis, N., Dimitrakis, P., Provata, A. and Sirakoulis, G.Ch., Emergence of chimera states with re-programmable memristor crossbar arrays Volume 2021-May, Article Number: 9401669, 2021 [doi]

Rallis, K., Dimitrakis, P., Karafyllidis, I.G., Rubio, A. and Sirakoulis, G.C., Electronic Properties of Graphene Nanoribbons with Defects IEEE Transactions on Nanotechnology, Volume 20, Pages: 151-160, Article Number: 9337210, 2021 [doi]

Fyrigos, I.-A., Ntinas, V., Sirakoulis, G.C., DImitrakis, P. and Karafyllidis, I.G., Quantum Mechanical Model for Filament Formation in Metal-Insulator-Metal Memristors IEEE Transactions on Nanotechnology, Volume 20, Pages: 113-122, Article Number: 9316152, 2021 [doi]

Fyrigos, I.-A., Chatzinikolaou, T.P., Ntinas, V., Vasileiadis, N., Dimitrakis, P., Karafyllidis, I. and Sirakoulis, G.Ch., Memristor crossbar design framework for quantum computing Volume 2021-May, Article Number: 9401581, 2021 [doi]

Vasileiadis, N., Karakolis, P., Mandylas, P., Ioannou-Sougleridis, V., Normand, P., Perego, M., Komninou, P., Ntinas, V., Fyrigos, I.-A., Karafyllidis, I., Sirakoulis, G.C. and Dimitrakis, P., Understanding the Role of Defects in Silicon Nitride-Based Resistive Switching Memories through Oxygen Doping IEEE Transactions on Nanotechnology, Volume 20, Pages: 356-364, Article Number: 9403953, 2021 [doi]

Vasileiadis, N., Ntinas, V., Fyrigos, I.-A., Karamani, R.-E., Ioannou-Sougleridis, V., Normand, P., Karafyllidis, I., Sirakoulis, G.Ch. and Dimitrakis, P., A new 1P1R image sensor with in-memory computing properties based on silicon nitride devices Volume 2021-May, Article Number: 9401586, 2021 [doi]

Kapetanakis, Eleftherios, Katsogridakis, Charalampos, Dimotikali, Dimitra, Argitis, Panagiotis and Normand, Pascal, Ion-Activated Greatly Enhanced Conductivity of Thin Organic Semiconducting Films in Two-Terminal Devices Advanced Electronic Materials, Volume 6, Pages: 2000238, 2020 [doi]

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Disclaimer: Publications of the group count all publications involving group members, including those authored when members were working in other Institutions (i.e. without INN affiliation). We apologize for this inconvenience due to method used to find group publications, and declare that the group has no claims over publications involving non-INN affiliations.

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