CVD Tempress Omega Junior



Vassilis Vamvakas


CVD 1/ Chemical Vapor Deposition 1

Tempress Omega Junior

Fabrication of conformal thin film materials onto rigid substrates from the gaseous phase of one or more chemical precursors. Depending on the process conditions (substrate material, temperature, pressure, gas flow(s), reaction gas composition, etc.), various materials (e.g., Si, SiO2, Si3N4) can be grown. Typical applications include the production of electrical insulating, dopant diffusion blockingandetch stoppinglayers, anti-reflective coatingsand waveguide active layers as well as MEMS structures like membranes and cantilevers. CVD is widely used in the semiconductor industry for the fabrication of integrated circuits, optoelectronic devices, sensors, micro-electromechanical systems, solar cells, etc.

Technical Specifications
•System Type:Low-Pressure CVD industrial type system including3 horizontal reactors
•Coatings: a-Si, poly-Si, SiO2, Si3N4, SiOxNy, Silicon rich SiOx/ SixNy/ SiOxNy
•Reaction Gasses:Tetra Ethyl Ortho Silicate, Dichloro Silane, Ammonia, Silane
•Process Parameter so Temperature: 550 –610oC for a / poly-Si, 425-710oC for SiO2, 810oC for Si3N4o Pressure: 300 mTorroRamp Up / Ramp Down: 10oC/min
•Sample dimensions: From 4” wafer down to 1 cm x 1 cm square samples
•Operating environment: Clean-room ISO 6 (Class 1000) / ISO 5 (Class 100) at loading station

Skip to content