Eaton NV-3204


Dr. Vassilis Vamvakas



Ion implantation (II) allows for introducing in a controllable way energetic atoms or molecules into a solid to alter its physicochemical properties. Selective implantation can be achieved by means of a patterned masking material (e.g., SiO2, Si3N4, photoresists) formed onto the surface of the target material. In addition to Si, Ge and compound semiconductor doping for the fabrication of a wide range of devices (e.g., diodes, MOSFETs, Bipolar transistors, MESFETs), II is also employed for other applications including: Modification of insulating layers, Fabrication of Si nanocrystals, Modification of polymers and nano-composite materials, etc.

Technical Specifications

  • System type

Medium Current / Medium Energy Ion Implanter

  • Ion energy

20 – 200 keV (selectable in 1 keV increments)

  • Ion beam current

Up to 500μΑ

  • Species

B, BF2, P, As, N, Si, Ar

  • Uniformity / Repeatability

Better than 0.75% / 0.5%

  • Mass range / Resolution

125 AMU at standard extraction voltages, M/ΔΜ > 100/1

  • Implant Angle

Adjustable 0 to 15 degs

  • Sample dimensions

From 4” wafer down to 1 cm x 1 cm square samples

  • Operating environment

Clean-room ISO 6 (Class 1000)

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