Energy harvesting, Energy Storage, Sensors, microelectronics, microfabrication


Emmanouel Hourdakis was born on July 28, 1978. He received his B.Sc. degree in physics from the University of Crete in 2001. He received his M.S. (2004) and Ph.D. (2007) degrees in Physics from the University of Maryland. Most of his Ph.D. thesis research was conducted at the National Institute of Standards and Technology (NIST) at Gaithersburg, USA.

Currently he is a post-doctoral researcher at the Institute of Nanoscience and Nanotechnology (INN) of NCSR Demokritos in Greece. His interests focus on the design, fabrication and characterization of Si-based microelectronic, optoelectronic and thermoelectric devices, on-chip energy storage devices, low power and autonomous sensors and the electrical properties of high-k dielectrics. His expertise includes deposition techniques for thin films (thermal evaporation, sputtering), electrochemical creation of nanostructured materials (porous alumina, porous Si), batch Si processing techniques (photolithography, e-beam lithography, chemical and plasma etching of materials) and characterization techniques (electrical, Scanning Electron Microscopy). He has co-authored 35 publications in international journals, 1 book chapter and has 22 presentations in national and international conferences, 3 of which were invited.


Hourdakis, E., Pepponi, G., Barozzi, M. and Nassiopoulou, A.G., Simple method for determining Si p-n junction depth using anodization Microelectronic Engineering, Volume 244-246, Article Number: 111558, 2021 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Microcapacitors for Energy Storage: General Characteristics and Overview of Recent Progress Physica Status Solidi (A) Applications and Materials Science, Volume 217, Article Number: 1900950, 2020 [doi]

Hourdakis, E., Kaidatzis, A., Niarchos, D. and Nassiopoulou, A.G., Voltage-controlled negative differential resistance in metal-sputtered alumina-Si structures Journal of Physics D: Applied Physics, Volume 52, Article Number: 085101, 2019 [doi]

Hourdakis, E., Casanova, A., Larrieu, G. and Nassiopoulou, A.G., Three-dimensional vertical Si nanowire MOS capacitor model structure for the study of electrical versus geometrical Si nanowire characteristics Solid-State Electronics, Volume 143, Pages: 77-82, 2018 [doi]

Hourdakis, E., Koutsoureli, M., Papaioannou, G. and Nassiopoulou, A.G., Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors Journal of Applied Physics, Volume 123, Article Number: 215301, 2018 [doi]

Hourdakis, E., Nassiopoulou, A.G., Casanova, A. and Larrieu, G., Model 3D MOS capacitor system using regular arrays of vertical Si nanowires Pages: 124-127, Article Number: 7962618, 2017 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes Applied Physics Letters, Volume 111, Article Number: 033503, 2017 [doi]

Hourdakis, E. and Nassiopoulou, A.G., Direct Al-imprinting method for increased effective electrode area in MIM capacitors IEEE Transactions on Electron Devices, Volume 63, Pages: 746-750, Article Number: 7359184, 2016 [doi]

Hourdakis, E., Travlos, A. and Nassiopoulou, A.G., High-performance MIM capacitors with nanomodulated electrode surface IEEE Transactions on Electron Devices, Volume 62, Pages: 1568-1573, Article Number: 7065297, 2015 [doi]

Roda Neve, C., Ben Ali, K., Sarafis, P., Hourdakis, E., Nassiopoulou, A.G. and Raskin, J.-P., Effect of temperature on advanced Si-based substrates performance for RF passive integration Microelectronic Engineering, Volume 120, Pages: 205-209, 2014 [doi]

Mouis, M., Chávez-Ángel, E., Sotomayor-Torres, C., Alzina, F., Costache, M.V., Nassiopoulou, A.G., Valalaki, K., Hourdakis, E., Valenzuela, S.O., Viala, B., Zakharov, D., Shchepetov, A. and Ahopelto, J., Thermal Energy Harvesting Volume 9781848216549, Pages: 135-219, 2014 [doi]

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