Emmanouel Hourdakis was born on July 28, 1978. He received his B.Sc. degree in physics from the University of Crete in 2001. He received his M.S. (2004) and Ph.D. (2007) degrees in Physics from the University of Maryland. Most of his Ph.D. thesis research was conducted at the National Institute of Standards and Technology (NIST) at Gaithersburg, USA.
Currently he is a post-doctoral researcher at the Institute of Nanoscience and Nanotechnology (INN) of NCSR Demokritos in Greece. His interests focus on the design, fabrication and characterization of Si-based microelectronic, optoelectronic and thermoelectric devices, on-chip energy storage devices, low power and autonomous sensors and the electrical properties of high-k dielectrics. His expertise includes deposition techniques for thin films (thermal evaporation, sputtering), electrochemical creation of nanostructured materials (porous alumina, porous Si), batch Si processing techniques (photolithography, e-beam lithography, chemical and plasma etching of materials) and characterization techniques (electrical, Scanning Electron Microscopy). He has co-authored 35 publications in international journals, 1 book chapter and has 22 presentations in national and international conferences, 3 of which were invited.