The project objectives include the development of new technologies for thin film devices and microsystems. Specifically:

• Development of semiconducting transition metal dichalcogenide (TMDC), and metal oxide thin films as channel materials, using various physical deposition, liquid, mechanical exfoliation and crystallization techniques to yield purity and quality needed for device applications.
• Research on TMDC TFTs fabricated in MoS₂, MoSe₂, WSe₂ or WS₂ films on various substrates at low and room temperatures, suitable for display, flexible, wearable or ubiquitous electronics. In particular, investigation of TMDC TFTs incorporating various interfacial layers, like perovskites, phthalocyanine small molecules or organic semiconductors, to control polarity and determine p-type, n-type or ambipolar conduction.
• Investigation of ionic and molecular liquid – enabled performance boost for TMDC TFTs, shaping high performance hybrid (solid/liquid) channels inside impure low quality film precursors through the use of copper phthalocyanine (CuPc) solution in butanol as ionic liquid filler, dopant and encapsulant.
• Investigation of approaches for complementary circuits utilizing both p-type and n-type TFTs as developed in TMDC or metal oxide films.
• Fabrication and characterization of microsystems, such as sensors and large area electronics, based on said thin films and TFTs.