Cold wall 4-inch CVD reactor ANNEALSYS for graphene growth, equipped with graphite susceptor, capable of growth up to 1200°C. The system is fully automated, working in a pressure range 2·10-2 Torr up to atmospheric. The system is also capable of rapid thermal processing with a rump up rate of 200°C/s and a fast-cooling rate.

The Chemical Vapor Deposition (CVD) system equipped with a 4-inch cold wall chamber
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