ABOUT
The group focuses on the development of photovoltaic and optoelectronic devices based on solution-processed, inorganic and hybrid organic-inorganic semiconductors. We are working towards the enhancement of the efficiency and the stability of both solar cells and LEDs. The materials we are working on are metal halide perovskites and metal chalcogenides. We focus on both bulk polycrystalline films with (e.g. CsPbI3, BaZrS3) or without perovskite crystal structure (Sb2S(Se)3), and quantum dots (lead and tin halide perovskites, CuInS2, AgInS2, AgBiS2 etc.).
Using our expertise, we aim at enhancing the optoelectronic quality of our materials:
1. Bulk polycrystalline films

Ionic and molecular passivation
Consolidating stable light-emission from air-sensitive photoluminescent materials
- Thiol-Ammonium Passivation Unlocks Air-Stable FAPbI₃ LEDs (submitted)
Exploring the secrets of stability of solar cells
- Accelerated Stability Test Integrated with Electrical Characterization of CsFAMA Perovskite Solar Cells (submitted)
2. Nanocrystals/Quantum dots

In our laboratory, we develop and optimize diverse synthesis strategies for quantum dot (QD) nanocrystals. For Cu–In–based chalcogenide QDs, we employ a hot-injection method under inert conditions, enabling precise control over nucleation and growth. Ag–In–Zn–S (AIZS) QDs are prepared using a low-temperature solution process, which proceeds under mild conditions and allows for efficient surface stabilization. In addition to chalcogenides, we also synthesize lead-halide perovskite QDs, such as CsPbI₃, CsPbBr₃, and FAPbI₃, through a straightforward antisolvent precipitation method that offers rapid, scalable access to highly luminescent nanocrystals. Together, these complementary approaches allow us to engineer QDs with tailored size, composition, and optical properties, paving the way for advanced applications in optoelectronic devices.
Developing nanocrystals with good charge transport and light-emissive properties:
Enhancing electroluminescence of perovskite and chalcogenide quantum dots
- Low-Temperature Synthesis of Luminescent Ag-In-Zn-S Quantum Dots for Device-Grade Semiconductor Inks
Substituting toxic lead perovskites with tin and zirconium-based chalcogenide perovskites
We are also working close with Prof. Tsoukalas and Dr. Bousoulas group in NTUA on memristors:
- Low Power FA2PbI4/SiO2 Bilayer Memristors with Pt Nanoparticles Exhibiting Reconfigurable Synaptic and Neuron Properties for Compact Optoelectronic Neuromorphic Systems
- Highly reliable perovskite-based memristors using Ag nanoparticles/FA2PbI4 junctions for enhanced memory and optoelectronic synaptic performance (APL, in press)
Finally, we collaborate with Prof. Tzounis group in Crete to fabricate inorganic-organic thermoelectric generators: Carbon Nanotube Hybrid n- and p-type Networks for Flexible and High-Power-Density Thermoelectric Generators (manuscript in preparation).
